#TeamNexperia will be in Sorrento, Italy all week for the International Conference on Silicon Carbide and Related Materials (ICSCRM).
Besides enjoying the beautiful scenery and engaging in enlightening conversations with researchers and engineers from around the globe, we’re sharing the attached posters presenting some of the innovative work our people are doing in the silicon carbide (SiC) and wide bandgap semiconductor space.
• Ohmic Contact Resistance in SiC Diodes with Ti and NiSi P+ Contacts – Massimo Mazzillo
• Early-stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes – David Momeni
• Systematic Tracking Defects from Substance to Final Device by Full Wafer Mapping Techniques – Firas Faisal
• Influence of Material Properties on Ruggedness Evaluation of Package Architecture for SiC Power Devices – Soenke Habenicht
We can’t wait to learn about the advances being made in the SiC community and share our solutions to meet the growing demand for superior efficiency and power density.
#SiC #ICSCRM2023 #powerelectronics
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