Burkhard is back again, and this time will be showing the influence of high-frequency signals on the hold current behavior of snapback ESD protection diodes. He demonstrates this using a late-generation Nexperia deep snapback device and a generator that outputs a 10 MHz rectangular signal. Laue explains that turn-off takes longer due to saturation effects and that the device becomes fully high-ohmic if the current falls below 44 mA, reducing the risk of constant latch-up. This experiment is important for understanding the behavior of snapback devices in modern high-speed interfaces like USB.
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