Our first-ever silicon carbide (SiC) MOSFETs have arrived offering unparalleled performance set to redefine power switching in industrial applications, including electric vehicle charging piles, uninterruptible power supplies, and inverters for solar and energy storage systems.
“With these inaugural products, Nexperia and Mitsubishi Electric wanted to bring true innovation to a market that has been crying out for more wide-bandgap device suppliers” – Katrin Feurle, Senior Director & Head of Product Group SiC.
Our engineers have worked tirelessly to deliver SiC MOSFETs with industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25°C to 175°C, setting our chips apart from many currently available devices on the market.
The two 1200 V discrete devices represent the first in a series of planned additions to our quickly expanding SiC MOSFET portfolio.
Learn more about our journey to raise the bar for safe, robust, and reliable power switching – https://www.nexperia.com/products/sic-mosfets#/p=1,s=0,f=,c=,rpp=,fs=0,sc=,so=,es=
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