Our first entry into the IGBT (Insulated Gate Bipolar Transistor) market launches today with a range of 600 V devices that address the growing demand for efficient, high-voltage switching devices with a range of performance and cost requirements while empowering electronics designers with robust, 175 °C qualified devices with fully rated fast recovery diodes.
The latest additions to our extensive portfolio enable higher power density in power conversion and motor drive applications, including industrial motor drives like servo motors ranging from 5 to 20 kW (20 kHz), robotics, elevators, operating grippers, in-line manufacturing, power inverters, uninterruptible power supply (UPS), photovoltaic (PV) strings, EV-charging, and induction heating and welding.
See the full datasheet for our first available device, a 600 V, 30 A, carrier-stored Trench FS3 SC Robust IGBT – https://www.nexperia.com/products/igbts/NGW30T60M3DF.html?identifier=NGW30T60M3DF
#learningeveryday – IGBTs can synthesize complex waveforms with pulse-width modulation and low-pass filters, which is a fancy way of saying they can be used in switching amplifiers in sound systems. An IGBT is a bipolar transistor with an isolated gate structure, with the gate itself being basically a metal-oxide-semiconductor field-effect transistor (MOSFET). Fun fact; the MOSFET was invented by Mohammed M. Atalla and Dawon Kahng all the way back in 1959.
#IGBT #semiconductor #electronics
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