Using silicon carbide (SiC) Schottky diodes improves efficiency and performance in power conversion applications.
In his whitepaper From SiC to Thin SiC: Pushing Power Diodes to the Next Level, Dr. Sebastian Fahlbusch concluded that compared to silicon, SiC diodes provide superior technical advantages like significantly better switching performance and allow system engineers to improve their power applications. SiC diodes enable higher efficiency and power density, lower EMI, better reliability, and lower system complexity.
Sonu Daryanani published an article in Power Electronics News based on the whitepaper digging deeper into the advantages of SiC Schottky Diodes that enable fast, low-loss switching in stand-alone and freewheeling applications when combined with IGBTs or SiC MOSFETs.
Read the full article – https://www.powerelectronicsnews.com/thin-sic-schottky-power-diodes-improve-performance-in-power-conversion-applications/
#SiC #powerconversion #silcioncarbide #teamnexperia
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