T-25 days until PCIM Europe 2024, but who’s counting?
We’re excited to unveil the next of our four Demo Zones: Winde-bandgap FETs.
When it comes to power FETs, our wide-bandgap devices (GaN, SiC) are setting the performance standard. Whether it’s 100 V, 650 V or 1200 V, our latest products are helping power tomorrow’s innovations. Stop by Hall 9 Booth 412 to catch the featured demos:
Unveiling exceptional RDS(on) temperature stability with Nexperia’s first SMD SiC MOSFETs in a h-bridge configuration.
Half-bridge evaluation board for benchmarking E-mode GaN FET switching performance.
Implementing the bridgeless totem-pole PFC architecture with a standard boost PFC controller.
Let us know in the comments below or a DM if you’re interested in setting up some time with the #teamnexperia booth team. See you there!
Check out our full lineup of demos & live talks – https://www.nexperia.com/about/news-events/events/pcim
#widebandgap #gan #sic #powerelectronics
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