How do you follow up on releasing a 1200 V Silicon Carbide power MOSFET in a 3-pin TO-247 package featuring excellent RDSon temperature stability?
You release a SiC-based 1200 V power MOSFET in a well-established 4-pin TO-247 package for through hole PCB mounting technology.
🚀 Unveiling the newest addition to our SiC 1200 V power MOSFET lineup 🚀
With outstanding RDSon temperature stability and lightning-fast switching speed, it’s the ultimate choice for high-power, high-voltage industrial applications. From E-vehicle charging infrastructure to photovoltaic inverters and motor drives, our SiC MOSFETs are powering the future!
💡 Embracing Silicon Carbide technology means more efficient, compact, and reliable solutions for sustainable energy systems. Join us in shaping the future of power electronics!
👇Click below to learn more.
https://www.nexperia.com/products/sic-mosfets#/p=1,s=0,f=,c=,rpp=,fs=0,sc=,so=,es=
#PowerInnovation #SiliconCarbide #Semiconductors #IndustrialApplications #SustainableEnergy
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