What makes our SiC devices ideal for demanding power conversion applications like motor drives, charging infrastructure, solar, and uninterruptable power supplies?
One key advantage of our 1200 V Silicon Carbide MOSFETs is their best-in-class RDSon temperature stability, a crucial factor for performance and reliability. Unlike similar devices, our SiC MOSFETs boast a resistance drift factor of only 1.4, a remarkable achievement compared to the industry average of 1.6 to 2.
Learn more about our SiC journey and raising the bar for safe, robust, and reliable power switching – https://www.nexperia.com/products/sic-mosfets#/p=1,s=0,f=,c=,rpp=,fs=0,sc=,so=,es=
#PowerElectronics #SiC #MOSFET
(Feed generated with FetchRSS)