We’ve put the power of choice between high-performance, compact devices for both 650 V and 100 / 150 V in the designer’s hands with the addition of e-mode (enhancement mode) products to our GaN FET (Gallium Nitride Transistors) portfolio.
Power GaN FETs have become increasingly accepted since Nexperia first introduced our 650 V cascode devices at the end of 2019. In fact, according to Straits Research, a market valuation of US$ 178.2 million in 2021 is expected to rise to around US$ 2.8 billion by 2030.
GaN technology delivers the best performance in power conversion topologies and has proven its value in a range of demanding industrial automation, server, computing and telecom infrastructure applications. This in turn has led GaN to become less of a specialty technology and increasingly is being adopted into mainstream applications. This is because of all the wide bandgap (WBG) semiconductor materials, GaN offers the fastest transition/switching capability (highest dv/dt and di/dt) along with the best efficiency regardless of whether it is for low- or high-power applications.
Learn more in Giuliano’s latest blog post – https://efficiencywins.nexperia.com/innovation/broadening-gan-fet-applications-with-e-mode.html
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